i nchange semiconductor isc product specification isc website isc & iscsemi is registered trademark 1 isc silicon pn p power transistor 2 s b 9 2 4 description wide safety operation area l ow collector saturation voltage : v ce(sat) = - 0. 5 v(max)@i c = - 1 2 a complement to t ype 2 s d 1 2 40 applic ations designed for large current switching of relay drivers, high - speed inverters, converters appli cations. a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltage - 12 0 v v ceo collector - e mitter v oltage - 8 0 v v ebo emitter - b ase v oltage - 6 v i c collector c urrent - continuous - 2 5 a i c m collector c urrent - peak - 40 a p c total p ower d issipat i on @ t c =25 120 w t j junction temperature 150 t stg storage temperature range - 55~ 150
i nchange semiconductor isc product specification isc website isc & iscsemi is registered trademark 2 isc silicon pnp power transistor 2 s b 9 2 4 electrical characteristics t c =25 v (br) ceo collector - e mitter breakdown v oltage i c = - 1 m a; r b e = - 8 0 v v (br) cbo collector - b ase breakdown v oltage i c = - 1m a; i e = 0 - 12 0 v v (br) ebo emitter - b ase breakdown v oltage i e = - 1m a; i c = 0 - 6 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 1 2 a ; i b = - 1 .2 a - 0. 5 v i c b o collector c utoff c urrent v c b = - 8 0 v ; i e = 0 - 0.1 ma i ebo emitter c utoff c urrent v eb = - 4 v; i c = 0 - 0.1 ma h fe - 1 dc c urrent g ain i c = - 1 a; v ce = - 2 v 70 280 h fe - 2 d c c urrent g ain i c = - 1 2 a; v ce = - 2 v 30 f t current - gain bandwidth product i c = - 1 a; v ce = - 2 v 20 mhz ? h fe - 1 classifications q r s 70 - 140 100 - 2 00 140 - 280
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